SUM40010EL www.vishay.com vishay siliconix s15-2184-rev. a, 14-sep-15 1 document number: 66984 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 n-channel 40 v (d-s) mosfet ordering information: SUM40010EL-ge3 (lead (pb)-free and halogen-free) features ? trenchfet ? power mosfet ? maximum 175 c junction temperature ?q gd /q gs ratio < 0.5 ? operable with logi c-level gate drive ? 100 % r g and uis tested ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 applications ? power supply - secondary synchronous rectification ?dc/dc converter ? power tools ? motor drive switch ? dc/ac inverter ? battery management notes a. duty cycle 1 %. b. see soa curve for voltage derating. c. when mounted on 1" square pcb (fr4 material). d. package limited. product summary v ds (v) r ds(on) ( ) max. i d (a) d q g (typ.) 40 0.0016 at v gs = 10 v 120 150 0.0019 at v gs = 4.5 v 120 to-263 top view g d s g d s n-channel mosfet g d s absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 40 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) t c = 25 c i d 120 d a t c = 70 c 120 d pulsed drain current (t = 100 s) i dm 300 avalanche current l = 0.1 mh i as 80 single avalanche energy a e as 320 mj maximum power dissipation a t c = 25 c p d 375 b w t c = 125 c 125 b operating junction and storage temperature range t j , t stg -55 to +175 c thermal resistance ratings parameter symbol limit unit junction-to-ambient (pcb mount) c r thja 40 c/w junction-to-case (drain) r thjc 0.4
SUM40010EL www.vishay.com vishay siliconix s15-2184-rev. a, 14-sep-15 2 document number: 66984 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not su bject to production testing. c. independent of operating temperature. stresses beyond those listed under absolute maximum ratings ma y cause permanent damage to th e device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those in dicated in the operational sectio ns of the specifications is not implied. exposure to absolute maximum rating conditions for extended pe riods may affect device reliability. specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 40 - - v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.2 - 2.5 gate-body leakage i gss v ds = 0 v, v gs = 20 v - - 250 na zero gate voltage drain current i dss v ds = 40 v, v gs = 0 v - - 1 a v ds = 40 v, v gs = 0 v, t j = 125 c - - 150 v ds = 40 v, v gs = 0 v, t j = 175 c - - 5 ma on-state drain current a i d(on) v ds 10 v, v gs = 10 v 120 - - a drain-source on-s tate resistance a r ds(on) v gs = 10 v, i d = 30 a - 0.00127 0.00160 v gs = 4.5 v, i d = 20 a - 0.00152 0.00190 forward transconductance a g fs v ds = 15 v, i d = 30 a - 174 - s dynamic b input capacitance c iss v gs = 0 v, v ds = 30 v, f = 1 mhz - 11 155 - pf output capacitance c oss - 7410 - reverse transfer capacitance c rss - 880 - total gate charge c q g v ds = 20 v, v gs = 10 v, i d = 20 a - 150 230 nc gate-source charge c q gs -32- gate-drain charge c q gd -11- gate resistance r g f = 1 mhz 0.32 1.6 3.2 turn-on delay time c t d(on) v dd = 20 v, r l = 5 i d ? 10 a, v gen = 10 v, r g = 1 -1632 ns rise time c t r -2040 turn-off delay time c t d(off) -65100 fall time c t f -1735 drain-source body diode ra tings and characteristics b (t c = 25 c) pulsed current (t = 100 s) i sm --300a forward voltage a v sd i f = 10 a, v gs = 0 v - 0.8 1.5 v reverse recovery time t rr i f = 41 a, di/dt = 100 a/s - 135 203 ns peak reverse recovery charge i rm(rec) -510a reverse recovery charge q rr - 0.340 0.510 c
SUM40010EL www.vishay.com vishay siliconix s15-2184-rev. a, 14-sep-15 3 document number: 66984 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t a = 25 c, unless otherwise noted) output characteristics transconductance capacitance transfer characteristics on-resistance vs. drain current gate charge 0 50 100 150 200 0 0.5 1 1.5 2 2.5 3 i d - drain current (a) v d s -drain-to- s ource voltage (v) v gs = 10 v thru 4 v v gs = 3 v 0 60 120 180 240 300 0 1020304050 g f s -tran s conductance ( s ) i d -drain current (a) t c = 25 c t c = 125 c t c = - 55 c 0 4500 9000 13 500 18 000 0 10203040 c - capacitance (pf) v d s -drain-to- s ource voltage (v) c i ss c o ss c r ss 0 40 80 120 160 012345 i d - drain current (a) v gs - g ate-to- s ource voltage (v) t c = 25 c t c = 125 c t c = - 55 c 0 0.0005 0.001 0.0015 0.002 0.0025 0.003 0 20406080100 r d s (on) -on-re s i s tance () i d - drain current (a) v gs =4.5 v v gs = 10 v 0 2 4 6 8 10 04080120160 v gs - g ate-to- s ource voltage (v) q g -total g ate charge (nc) v d s = 32 v v d s = 10 v v d s = 20 v i d = 20 a
SUM40010EL www.vishay.com vishay siliconix s15-2184-rev. a, 14-sep-15 4 document number: 66984 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t a = 25 c, unless otherwise noted) on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage source drain diode forward voltage threshold voltage drain source breakdown vs . junction temperature current de-rating 0.7 0.95 1.2 1.45 1.7 - 50 - 25 0 25 50 75 100 125 150 175 r d s (on) -on-re s i s tance (normalized) t j - junction temperature (c) v gs = 4.5 v, i d = 30 a v gs = 10 v, i d = 30 a 0 0.001 0.002 0.003 0.004 0.005 0246810 r d s (on) -on-re s i s tance () v gs - g ate-to- s ource voltage (v) t j = 125 c t j = 25 c i d = 30 a 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s - s ource current (a) v s d - s ource-to-drain voltage (v) t j = 150 c t j = 25 c 0.3 0.7 1.1 1.5 1.9 2.3 - 50 - 25 0 25 50 75 100 125 150 175 v gs (th) (v) t j - temperature ( c) i d = 250 a 43 45 47 49 51 - 50 - 25 0 25 50 75 100 125 150 175 v d s (v) drain-to- s ource voltage t j -temperature ( c) i d = 250 a 0 110 220 330 440 0 255075100125150175 i d - drain current (a) t c -ca s e temperature ( c)
SUM40010EL www.vishay.com vishay siliconix s15-2184-rev. a, 14-sep-15 5 document number: 66984 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 thermal ratings (t a = 25 c, unless otherwise noted) safe operating area single pulse avalanche current capability vs. time normalized thermal transient impedance, junction-to-ambient 0.1 1 10 100 1000 0.1 1 10 100 i d - drain current (a) v d s - drain-to- s ource voltage (v) * v gs > minimum v gs at which r d s (on) i s s pecified limited by r d s (on) * 100 s t c = 25 c s ingle pul s e bvd ss limited 1 m s 100 m s , dc dc 10 m s i d limited i dm limited 10 100 1000 0.00001 0.0001 0.001 0.01 i dav (a) time ( s ) 150 c 25 c 10 -4 10 -3 10 -2 10 -1 1 10 100 1000 1 0.01 0.001 0.1 0.0001 sq uare wave pul s e duration ( s ) normalized effective tran s ient thermal impedance
SUM40010EL www.vishay.com vishay siliconix s15-2184-rev. a, 14-sep-15 6 document number: 66984 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 thermal ratings (t a = 25 c, unless otherwise noted) normalized thermal transient impedance, junction-to-case note ? the characteristics shown in the two graphs - normalized transient thermal impedance junction to ambient (25 c) - normalized transient thermal impedance junction to case (25 c) are given for general guidelines only to enable the user to ge t a ball park indication of part capabilities. the data are ext racted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. the latter is valid for the part mounted on printed circuit board - fr4, size 1" x 1" x 0.062" , double sided with 2 oz. copper, 100 % on both sides. the part ca pabilities can widely vary depending on actual application parameters and operating conditions. vishay siliconix maintains worldw ide manufacturing ca pability. products may be manufactured at one of several qualified locatio ns. reliability da ta for silicon technology and package reliability represent a composite of all qu alified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?66984 . square wave pulse duration (s) 2 1 0.1 0.01 10 -4 10 -3 10 -2 10 -1 1 normalized effective transient thermal impedance 0.2 0.1 duty cycle = 0.5 0.05 0.02 single pulse 10
package information www.vishay.com vishay siliconix revison: 30-sep-13 1 document number: 71198 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 to-263 (d 2 pak): 3-lead notes 1. plane b includes maximum featur es of heat sink tab and plastic. 2. no more than 25 % of l1 ca n fall above seating plane by max. 8 mils. 3. pin-to-pin coplanarity max. 4 mils. 4. *: thin lead is for sub, syb. thick lead is for sum, sym, sqm. 5. use inches as the primary measurement. 6. this feature is for thick lead. -a- -b- d1 d4 a a e b2 b e a c2 c l2 d l3 l detail ?a? e1 e2 k e3 d2 d3 6 0.010 m a m 2 pl detail a (rotated 90) s ection a-a 0 - 5 l1 l4 m c1 c b1 b inches millimeters dim. min. max. min. max. a 0.160 0.190 4.064 4.826 b 0.020 0.039 0.508 0.990 b1 0.020 0.035 0.508 0.889 b2 0.045 0.055 1.143 1.397 c* thin lead 0.013 0.018 0.330 0.457 thick lead 0.023 0.028 0.584 0.711 c1 thin lead 0.013 0.017 0.330 0.431 thick lead 0.023 0.027 0.584 0.685 c2 0.045 0.055 1.143 1.397 d 0.340 0.380 8.636 9.652 d1 0.220 0.240 5.588 6.096 d2 0.038 0.042 0.965 1.067 d3 0.045 0.055 1.143 1.397 d4 0.044 0.052 1.118 1.321 e 0.380 0.410 9.652 10.414 e1 0.245 - 6.223 - e2 0.355 0.375 9.017 9.525 e3 0.072 0.078 1.829 1.981 e 0.100 bsc 2.54 bsc k 0.045 0.055 1.143 1.397 l 0.575 0.625 14.605 15.875 l1 0.090 0.110 2.286 2.794 l2 0.040 0.055 1.016 1.397 l3 0.050 0.070 1.270 1.778 l4 0.010 bsc 0.254 bsc m - 0.002 - 0.050 ecn: t13-0707-rev. k, 30-sep-13 dwg: 5843
an826 vishay siliconix document number: 73397 11-apr-05 www.vishay.com 1 recommended minimum pads for d 2 pak: 3-lead 0.635 (16.129) recommended minimum pads dimensions in inches/(mm) 0.420 (10.668) 0.355 (9.017) 0.145 (3.683) 0.135 (3.429) 0.200 (5.080) 0.050 (1.257) return to index
legal disclaimer notice www.vishay.com vishay revision: 13-jun-16 1 document number: 91000 disclaimer ? all product, product specifications and data ar e subject to change with out notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of th e products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product , (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all implied warranties, includ ing warranties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain types of applicatio ns are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular applic ation. it is the customers responsibility to validate tha t a particular product with the prope rties described in the product sp ecification is suitable for use in a particular application. parameters provided in datasheets and / or specifications may vary in different ap plications and perfor mance may vary over time. all operating parameters, including ty pical parameters, must be va lidated for each customer application by the customer s technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product could result in personal injury or death. customers using or selling vishay product s not expressly indicated for use in such applications do so at their own risk. please contact authorized vishay personnel to obtain writ ten terms and conditions rega rding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.
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